Near infrared neuromorphic computing via upconversion-mediated optogenetics“, Yongbiao Zhai, Ye Zhou, Xueqing Yang, Feng Wang, Wenbin Ye, Xiaojian Zhu, Donghong She, Wei D Lu, Su-Ting Han, Nano Energy, 67, 104262, DOI: 10.1016/j.nanoen.2019.104262

Nanoscale resistive switching devices for memory and computing applications“, Seung Hwan Lee, Xiaojian Zhu, Wei D Lu, Nano Research, 1-16, DOI: 10.1007/s12274-020-2616-0

A Quantitative, Dynamic TaOx Memristor/RRAM Model“, Seung Hwan Lee, John Moon, YeonJoo Jeong, Jihang Lee, Xinyi Li, Huaqiang Wu, Wei D Lu, ACS Applied Electronic Materials, 2, 3, 701-709, DOI: 10.1021/acsaelm.9b007922019

A fully integrated reprogrammable memristor–CMOS system for efficient multiply–accumulate operations“, Fuxi Cai, Justin M Correll, Seung Hwan Lee, Yong Lim, Vishishtha Bothra, Zhengya Zhang, Michael P Flynn, Wei D Lu, Nature Electronics, 1 (2019), DOI: 10.1038/s41928-019-0270-x

Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM“, Jihang Lee, William Schell, Xiaojian Zhu, Emmanouil Kioupakis, Wei D Lu, ACS applied materials & interfaces, 11, 11579-11586 (2019), DOI: 10.1021/acsami.8b18386

Ionic modulation and ionic coupling effects in MoS 2 devices for neuromorphic computing“, Xiaojian Zhu, Da Li, Xiaogan Liang, Wei D Lu, Nature materials, 18, 141 (2019), DOI: 10.1038/s41563-018-0248-5

Nanoionic Resistive‐Switching Devices”, Xiaojian Zhu, Seung Hwan Lee, Wei D Lu, Advanced Electronic Materials, 1900184 (2019) DOI: 10.1002/aelm.201900184

Temporal data classification and forecasting using a memristor-based reservoir computing system“, John Moon, Wen Ma, Jong Hoon Shin, Fuxi Cai, Chao Du, Seung Hwan Lee, Wei D Lu, Nature Electronics, 2, pages480–487(2019), DOI: 10.1038/s41928-019-0313-32018

Self-Limited and Forming-Free CBRAM Device With Double Al2O3ALD Layers“, Jong Hoon Shin, Qiwen Wang, Wei D Lu, IEEE Electron Device Letters, 39, 1512-1515 (2018) DOI:10.1109/LED.2018.2868459

MoS2 Memristors Exhibiting Variable Switching Characteristics toward Biorealistic Synaptic Emulation“, Da Li, Bin Wu, Xiaojian Zhu, Juntong Wang, Byunghoon Ryu, Wei D Lu, Wei Lu, Xiaogan Liang, ACS nano, 12, 9240-9252 (2018) DOI: 10.1021/acsnano.8b03977

Neuromorphic Computing Using Memristor Crossbar Networks: A Focus on Bio-Inspired Approaches“, YeonJoo Jeong, Wei Lu, IEEE Nanotechnology Magazine, 12, 6-18 (2018) DOI:  0.1109/MNANO.2018.2844901

A general memristor-based partial differential equation solver”, Mohammed A. Zidan, YeonJoo Jeong, Jihang Lee, Bing Chen, Shuo Huang, Mark J. Kushner & Wei D. Lu, Nature Electronics,1, 411–420 (2018)

The Future of Electronics Based on Memristive Systems”, Mohammed A. Zidan, John Paul Strachan & Wei D. Lu, Nature Electronics, 1, 22–29 (2018) doi:10.1038/s41928-017-0006-8

Optogenetics-Inspired Tunable Synaptic Functions in Memristors”, Xiaojian Zhu and Wei D. Lu, ACS Nano, 12 (2), pp 1242–1249 (2018)

On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics”, Jihang Lee, Wei D. Lu, Advanced Materials, 30, 1702770 (2018) DOI: 10.1002/adma.201702770

K-means data clustering with memristor networks”, YeonJoo Jeong, Jihang Lee, John Moon, Jong Hoon Shin & Wei D Lu, Nano Letters, 18 (7), 4447–4453 (2018) DOI: 10.1021/acs.nanolett.8b01526

Neuromorphic computing with memristive devices”, Wen Ma, Mohammed A Zidan & Wei D Lu, Science China Information Sciences, 61 (6), 060422 (2018) DOI: 10.1007/s11432-017-9424-y

Parasitic Effect Analysis in Memristor-Array-Based Neuromorphic Systems”, YeonJoo Jeong, Mohammed A Zidan & Wei D Lu, IEEE Transactions on Nanotechnology,17 (1), 184-193 (2018) DOI: 10.1109/TNANO.2017.27843642017

Reservoir computing using dynamic memristors for temporal information processing”, C. Du, F. Cai, M. A Zidan, W. Ma, S.H. Lee, and Wei D. Lu, Nature Communications 8, 2204 (2017) doi:10.1038/s41467-017-02337-y

Sparse Coding with Memristor Networks”,Patrick M. Sheridan, Fuxi Cai, Chao Du, Wen Ma, Zhengya Zhang & Wei D. Lu, Nature Nanotechnology, (2017) doi:10.1038/nnano.2017.83)

Experimental Demonstration of Feature Extraction and Dimensionality Reduction UsingMemristor Networks,” S. Choi, J. H. Shin, J. Lee, P. Sheridan, and W. D. Lu, Nano Letters, 17, 3113–3118 (2017).

Field-Programmable Crossbar Array (FPCA) for Reconfigurable Computing”, Mohammed A. Zidan, YeonJoo Jeong, Jong Hoon Shin, Chao Du, Zhengya Zhang, and Wei D. Lu, IEEE Trans Multi-Scale Comp Sys, DOI 10.1109/TMSCS.2017.2721160 (2017)

Electronic and optical properties of oxygen vacancies in amorphous Ta2O5 from firstprinciples,” Jihang Lee, Wei D. Lu and Emmanouil Kioupakis, Nanoscale, 9, 1120-1127 (2017).

Ge nanowire photodetector with high photoconductive gain epitaxially integrated onSi substrate,” U. Otuonye, H.W. Kim, W.D. Lu, Applied Physics Letters, 110 (17), 173104 (2017).

Emulation of synaptic metaplasticity in memristors”, Xiaojian Zhu, Chao Du, YeonJoo Jeong, Wei D. Lu, Nanoscale, 9 (1), 45-51 (2017)

Memristive computing devices and applications”, Mohammed A Zidan, An Chen, Giacomo Indiveri, Wei D Lu, Journal of Electroceramics, 39 (1-4), 4-20 (2017)

Iodine vacancy redistribution in organic–inorganic halide perovskite films and resistive switching effects”, Xiaojian Zhu, Jihang Lee, Wei D Lu, Advanced Materials, 29 (29), 1700527 (2017)

Temporal Learning Using Second-Order Memristors”, Mohammed A Zidan, YeonJoo Jeong, Wei D Lu, IEEE Transactions on Nanotechnology,16 (4), 721-723 (2017)

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In‐Memory Boolean Logic”, Yuchao Yang, Minghui Yin, Zhizhen Yu, Zongwei Wang, Teng Zhang, Yimao Cai, Wei D Lu, Ru Huang, Advanced Electronic Materials, 3 (7), 1700032 (2017)

Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-based Memristors”, Jihang Lee, Emmanouil Kioupakis, Wei Lu, Bulletin of the American Physical Society, 62 (2017)


Progress in the Characterizations and Understanding of Conducting Filaments in ResistiveSwitching Devices”, Yuchao Yang, Wei D. Lu, IEEE Transactions on Nanotechnology, 15 (3), 465-472 (2016)

In Situ Nanoscale Electric Field Control of Magnetism by Nanoionics”, X. Zhu , J. Zhou , L. Chen , S. Guo , G. Liu , R.-W. Li, W. D. Lu, Advanced Materials, 28, 7658-7665, (2016)

Nanoscale electrochemistry using dielectric thin films as solid electrolytes”, Ilia Valov, Wei D. Lu, Nanoscale, 8 (29), 13828-13837 (2016)

Very Low-Programming-Current RRAM With Self-Rectifying Characteristics”, J. Zhou, F. Cai, Q. Wang, B. Chen, S. Gaba, W. D. Lu, IEEE Electron Device Letters, 37, 404-407 (2016)

Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor”, Lin Chen, Fuxi Cai, Ugo Otuonye, and Wei D. Lu, Nano Letters.16 (1), 420–426 (2016).

Feature extraction using memristor networks”, P. M. Sheridan, C. Du, W.D. Lu, IEEE Transactions on Neural Networks and Learning Systems, 27 (11), 2327-2336 (2016).

Tuning ionic transport in memristive devices by graphene with engineered nanopores,”  Jihang Lee, Chao Du, Kai Sun, Emmanouil Kioupakis, Wei D. Lu, ACS Nano, 10(3), 3571-3579 (2016) “Single-Readout High-Density Memristor Crossbar,”  Mohammed A. Zidan, Hesham Omran, Rawan Naous, Ahmed  Sultan, Hossam A.H. Fahmy, Wei D. Lu, Khaled N. Salama, Scientific Reports, 6, 18863 (2016)   Electrochemistry at the Nanoscale”, Ilia Valov, Wei D Lu, Nanoscale, 8 (29), 13825-13827 (2016)   2015

Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor,” Lin Chen, Fuxi Cai, Ugo Otuonye, Wei D. Lu, Nano Letters, 16 (1), 420-426 (2015)   “Memristive Physically Evolving Networks Enabling Emulation of Heterosynaptic Plasticity”, Yuchao Yang, Bing Chen, Wei D. Lu, Advanced Materials, 27(47),7720-7727, (2015)   “Temporal Information Encoding in Dynamic Memristive Devices,” Wen Ma, Lin Chen, Chao Du, Wei D. Lu, Applied Physics Letters,107 (19), 193101 (2015)   “Utilizing Multiple State Variables to Improve the Dynamic Range of Analog Switching in a Memristor,” YeonJoo Jeong, Sungho Kim, Wei D. Lu, Applied Physics Letters, 107 (17), p. 173105.  (2015)
Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics,” Chao Du, Wen Ma, Ting Chang, Patrick Sheridan, Wei D. Lu, Advanced Functional Materials, 25, 4290–4299, (2015)   “Data Clustering using Memristor Networks”, ShinHyun Choi, Patrick Sheridan, Wei D. Lu, Scientific Reports, 5:10492 (2015).   “An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions”, Hongwei Tan, Gang Liu, Xiaojian Zhu, Huali Yang, Bin Chen, Xinxin Chen, Jie Shang, Wei D Lu, Yihong Wu, Run‐Wei Li, Advanced Materials, 27, 2797-2803, (2015)   “Experimental Demonstration of a Second-Order Memristor and Its Ability to Biorealistically Implement Synaptic Plasticity”, Sungho Kim , Chao Du , Patrick Sheridan , Wen Ma , ShinHyun Choi , and Wei D. Lu, Nano Letters, 15, 2203−2211 (2015).   “Conduction mechanism of a TaO x-based selector and its application in crossbar memory arrays”, Ming Wang, Jiantao Zhou, Yuchao Yang, Siddharth Gaba, Ming Liu, Wei D Lu, Nanoscale, 7, 4964–4970 (2015).   2014

Ultralow Sub-nA Operating Current Resistive Memory With Intrinsic Non-Linear Characteristics”, Siddharth Gaba, Fuxi Cai, Jiantao Zhou, and Wei D. Lu, IEEE Electron Device Letters, 35(12), 1239-1241 (2014).   “Electronic Properties of Tantalum Pentoxide Polymorphs from First-Principles Calculations”, Jihang Lee, Wei Lu, E. Kioupakis, Applied Physics Letters, 105, 202108 (2014).   “Tuning Resistive Switching Characteristics of Tantalum-Oxide Memristors through Si Doping”, Sungho Kim, Shinhyun Choi, Jihang Lee, Wei D. Lu, ACS Nano, 8, 10262-10269 (2014).   “Retention Failure Analysis of Metal-Oxide Based Resistive Memory”, Shinhyun Choi, Jihang Lee, Sungho Kim, Wei D. Lu, Applied Physics Letters, 105 (11), 113510 (2014).   “Crossbar RRAM Arrays: Selector Device Requirements During Write Operation”, Sungho Kim, Jiantao Zhou, Wei D. Lu, IEEE Transactions On Electron Devices, 61 (8), 2820-2826 (2014).   “Electrochemical dynamics of nanoscale metallic inclusions in dielectrics”, Yuchao Yang, Peng Gao, Linze Li, Xiaoqing Pan, Stefan Tappertzhofen, ShinHyun Choi, Rainer Waser, Ilia Valov, Wei D. Lu, Nature Communications, 5, 4232 (2014)   “Crossbar RRAM Arrays: Selector Device Requirements During Read Operation”, Jiantao Zhou, Kuk-Hwan Kim, and Wei Lu, IEEE Transactions On Electron Devices, 61 (5), 1369-1376 (2014).   “3-D Vertical Dual-Layer Oxide Memristive Devices”, Siddharth Gaba, Patrick Sheridan, Chao Du, and Wei Lu, IEEE Transactions On Electron Devices, 61 (7) 2581-2583, (2014).   “Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element”, Yuchao Yang, Jihang Lee, Seunghyun Lee, Che-Hung Liu, Zhaohui Zhong, and Wei Lu, Advanced Materials, 26, 3693–3699 (2014).   “Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor,” Sungho Kim, Shinhyun Choi, Wei Lu, ACS Nano, 8, 2369–2376 (2014).   “A Native Stochastic Computing Architecture Enabled by Memristors”, Phil Knag, Wei Lu, and Zhengya Zhang, IEEE Transactions On Nanotechnology, 13 (2), 283-293 (2014).   “Random Telegraph Noise and Resistance Switching Analysis of Oxide Based Resistive Memory”, Shinhyun Choi, Yuchao Yang, and Wei Lu, Nanoscale, 6, 400-404 (2014)   “Efficient Si Nanowire Array Transfer via Bi-Layer Structure Formation through Metal-Assisted Chemical Etching”, Taeho Moon, Lin Chen, Shinhyun Choi, Chunjoong Kim, and Wei Lu, Advanced Functional Materials, 24, 1949–1955 (2014)   2013

Vertical Nanowire Heterojunction Devices Based on a Clean Si/Ge Interface”, Lin Chen, Wayne Y. Fung and Wei Lu, Nano Letters, 13, 5521–5527 (2013)   “Nanoscale Resistive Switching Devices: Mechanisms and Modeling,” Yuchao Yang and Wei Lu, Nanoscale, 5, 10076-10092 (2013)   “Latch-up Based Bidirectional NPN Selector for Bipolar Resistance-Change Memory”, Sungho Kim, Dong-Il Moon, Wei Lu, Dae Hwan Kim, Dong Myong Kim, Yang-Kyu Choi, Sung-Jin Choi, Applied Physics Letters, 103, 033505 (2013)    “Stochastic Memristive Devices for Computing and Neuromorphic Applications”, S. Gaba, P. Sheridan, J. Zhou, S.H. Choi, W. Lu, Nanoscale, 5, 5872 (2013)   “Building Neuromorphic Circuits with Memristive Devices”, T. Chang, Y. Yang, W. Lu, IEEE Circuits and Systems Magazine, 13 (2), 56-73 (2013)   “Oxide Heterostructure Resistive Memory”, Y. Yang, S.H. Choi, W. Lu, Applied Physics Letters, 13, 2908−2915 (2013)   “Interference and Memory Capacity Effects in Memristive Systems”, John Hermiz, Ting Chang, Chao Du, and Wei Lu, Applied Physics Letters, 102, 083106 (2013)   “Memristors: Going active”, Wei Lu, Nature Materials, 12, 93-94 (2013)   2012

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory,” X. J. Zhu, W. J. Su, Y. W. Liu, B. L. Hu, L. Pan, W. Lu, J. D. Zhang, R. W. Li, Advanced Materials, 24, 3941-3946 (2012)    “Ambipolar Inverters using SnO Thin-Film Transistors with Balanced Electron and Hole Mobilities”, Ling Yan Liang, Hong Tao Cao, Xiao Bo Chen, Zhi Min Liu, Fei Zhuge, Hao Luo, Jun Li, Yi Cheng Lu, and Wei Lu, Applied Physics Letters, 100, 263502 (2012)   “Complementary resistive switching in tantalum oxide-based resistive memory devices”, Yuchao Yang, Patrick Sheridan, and Wei Lu, Applied Physics Letters, 100, 203112 (2012)   “Observation of conducting filament growth in nanoscale resistive memories”, Yuchao Yang , Peng Gao , Siddharth Gaba , Ting Chang , Xiaoqing Pan, and Wei Lu, Nature Communications, 3, 732 (DOI: 10.1038/ncomms1737) (2012)   “Electrochemical metallization cells—blending nanoionics into nanoelectronics?” Wei Lu, Doo Seok Jeong, Michael Kozicki, and Rainer Waser, MRS Bulletin, 37, 124-130 (2012).    “A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications”, K.-H. Kim, S. Gaba, D. Wheeler, J. M. Cruz-Albrecht, T. Hussain, N. Srinivasa, and W. Lu, Nano Letters, 12, 389–395 (2012).   2011

Andreev tunneling enhanced by Coulomb oscillations in superconductor-semiconductor hybrid Ge/Si nanowire devices”, Xiao-Jie Hao, Hai-Ou Li, Tao Tu, Cheng Zhou, Gang Cao, Guang-Can Guo, Guo-Ping Guo, Wayne Y. Fung, Zhongqing Ji, and Wei Lu, Physical Review B, 84, 195448 (2011)   “ITO nanowires and nanoparticles for transparent films”, Eric N. Dattoli and Wei Lu, MRS Bulletin, 36, 782-788 (2011).   “Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor”, Ting Chang, Sung-Hyun Jo, and Wei Lu, ACS Nano, 9, 7669–7676 (2011).   “Esaki Tunnel Diodes Based on Vertical Si-Ge Nanowire Heterojunctions”, Wayne Y. Fung, Lin Chen, and Wei Lu, Applied Physics Letters, 99, 092108 (2011).   “Device and SPICE modeling of RRAM devices”, P. Sheridan, K.H. Kim, S. Gaba, T. Chang, L. Chen, and W. Lu, Nanoscale, 3 (9), 3833-3840 (2011).   “Synaptic Behaviors and Modeling of a Metal Oxide Memristive Device”, T. Chang, S. H. Jo, K.-H. Kim, P. Sheridan, S. Gaba, and W. Lu, Physical Review A, 102, 851-855 (2011).   “Organic Vapor Discrimination with Chemiresistor Arrays of Temperature Modulated Tin-Oxide Nanowires and Thiolate-Monolayer-Protected Gold Nanoparticles“, K. Scholten, F. I. Bohrer, E. Dattoli, W. Lu, and E. T. Zellers, Nanotechnology, 22, 125501 (2011).   “Growth and Electrical Properties of Al-Catalyzed Si Nanowires”, S.-Y. Choi, W. Y. Fung, and W. Lu, Applied Physics Letters, 98, 033108 (2011).   “Controlled 3D Buckling of Silicon Nanowires for Stretchable Electronics”, F. Xu, W. Lu, and Y. Zhu, ACS Nano, 5 (1), pp 672–678 (2011).   2010

Strong and Tunable Spin-Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires” X.-J. Hao, T. Tu, G. Cao, C. Zhou, H.-O. Li, G.-C. Guo, W. Y. Fung, Z. Ji, G.-P. Guo, and W. Lu, Nano Letters, 10, 2956–2960 (2010).   “Nanoscale Memristor Device as Synapse in Neuromorphic Systems,” Sung Hyun Jo, Ting Chang, Idongesit Ebong, Bhavi Bhavitavya, Pinaki Mazumder and Wei Lu, Nano Letters, 10, 1297-1301 (2010). (Featured in NatureEE TimesNew ScientistPhysicsOrgChemistry World and other news outlets.)   “Resistance Switching in Polycrystalline BiFeO thin Films”, K Yin, M Li, Y Liu, C He, F Zhuge, B Chen, W Lu, X Pan, RW Li, Applied Physics Letters, 97, 042101 (2010).   “Nanoscale Resistive Memory with Intrinsic Diode Characteristics and Long Endurance”, K.-H. Kim, S. H. Jo, S. Gaba and W. Lu, Applied Physics Letters, 96, 053106 (2010).   2009

Mechanical Properties of Vapor-Liquid-Solid Synthesized Silicon Nanowires”, Y. Zhu, F. Xu, Q. Qin, W. Y. Fung, and W. Lu, Nano Letters, 9, 3934-3939 (2009).   “Radio Frequency Nanowire Resonators and in-situ Frequency Tuning”, W. Y. Fung, E. N. Dattoli and W. Lu, Applied Physics Letters, 94, 203104 (2009).   “Radio Frequency Operation of Transparent Nanowire Thin-Film Transistors”, E. N. Dattoli, K.-H. Kim, W. Y. Fung, S.-Y. Choi and W. Lu, IEEE Transactions On Electron Devices, 30, 730-732 (2009).   “High-Density Crossbar Arrays Based on a Si Memristive System”, S. H. Jo, K.-H. Kim and W. Lu, Nano Letters, 9, 870-874 (2009). (Highlighted in Nature Materials.)   “Programmable Resistance Switching in Nanoscale Two-Terminal Devices”, S. H. Jo, K.-H. Kim and W. Lu, Nano Letters, 9, 496-500 (2009).   2008

“Nanowire Transistor Performance Limits and Applications,” (invited review article) W. Lu, P. Xie and C. M. Lieber, IEEE Transactions On Electron Devices, 55 (11), 2859-2876 (2008).   “Semiconductor Nanowire Devices” (invited review article) O. Haydena, R. Agarwal and W. Lu, Nano Today, 3 (5-6) 12-22 (2008).   “Doping Dependent Electrical Characteristics of SnO2 Nanowires,” Q. Wan, E. N. Dattoli and W. Lu, Small, 4 (4), 451-454 (2008).   “Branched SnO2 Nanowires on Metallic Nanowire Backbones with Sub-ppm Sensitivity to Ethanol,” Q. Wan,  J. Huang, Z. Xie, T. Wang, E. N. Dattoli, and W. Lu, Applied Physics Letters, 92, 102101-3 (2008) (Cover article).   “CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory,” S. Jo, and W. Lu, Nano Letters, 8, 392-397 (2008).   “Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches,” Y. Dong, G. Yu, M. McAlpine, W. Lu, C. M. Lieber, Nano Letters, 8, 386-391 (2008).   2007

“Nanoelectronics from the Bottom-Up”, W. Lu, and C. M. Lieber, Nature Materials, 6, 841-850 (2007).   “Nanostructured Thin Films Made by Dewetting Method of Layer-By-Layer Assembly”, B. S. Shim, P. Podsiadlo, D. G. Lilly, A. Agarwal, J. Lee, Z. Tang, S. Ho, P. Ingle, D. Paterson, W. Lu, and N. A. Kotov, Nano Letters, 7, 3266-3273 (2007).   “Fully Transparent Thin-Film Transistor Devices Based on SnO2 Nanowires”, E. N. Dattoli, Q. Wan, W. Guo, Y. Chen, X. Pan, and W. Lu, Nano Letters, 7, 2463-2469 (2007). (Highlighted in MRS Bulletin.)   “Transparent metallic Sb-doped SnO2 nanowires.” E. N. Dattoli, Q. Wan, and W. Lu, Applied Physics Letters, 90, 222107 (2007). (Featured in and Virtual Journal of Nanoscale Science and Technology.)   2006

“High-Performance Transparent Conducting Oxide Nanowires.” Q. Wan, E. N. Dattoli, W. Y. Fung, W. Guo, Y. Chen, X. Pan, and W. Lu, Nano Letters, 6, 2909-2915 (2006).   “Semiconductor Nanowires” (invited review article), W. Lu and C. M. Lieber, Journal of Physics D: Applied Physics, 39, R387-R406 (2006).   “Ge/Si nanowire heterostructures as high-performance field-effect transistors”, J. Xiang*, W. Lu*, Y. Hu, Y. Wu, H. Yan, and C. M. Lieber, Nature, 441, 489-493 (2006). (*contributed equally)   2005

“One-dimensional hole gas in germanium/silicon nanowire heterostructures”, W. Lu, J. Xiang, B. P. Timko and C. M. Lieber, Proceedings of the National Academy of Sciences, 102, 10046-10051 (2005).   “Coherent single charge transport in molecular-scale silicon nanowires”, Z. Zhong, Y. Fang, W. Lu and C. M. Lieber, Nano Letters, 5, 1143-1146 (2005).   2004

“Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures”, Y. Wu, J. Xiang, C. Yang, W. Lu and C. M. Lieber, Nature, 430, 61-65 (2004).   “Synthesis and fabrication of high-performance n-type silicon nanowire transistors”, G. Zheng, W. Lu, S. Jin and C. M. Lieber, Advanced Materials, 16, 1890-1893 (2004).   2003

“Real-time detection of electron tunneling in a quantum dot”, W. Lu, Z. Ji, L. Pfeiffer, K. W. West and A. J. Rimberg, Nature, 423, 422-425 (2003).   2002

“Superconducting single-electron transistor coupled to a locally tunable electromagnetic environment”, W. Lu , K. D. Maranowski and A. J. Rimberg, Applied Physics Letters, 81, 4976-4978 (2002).   “Charge transport processes in a superconducting single-electron transistor coupled to a microstrip transmission line”, W. Lu, K. D. Maranowski and A. J. Rimberg, Physical Review B, 65, 060501(R) (2002).   2000

“Single-electron transistor strongly coupled to an electrostatically defined quantum dot”, W. Lu, A. J. Rimberg, K. D. Maranowski and A. C. Gossard, Applied Physics Letters, 77, 2746-2478 (2000).   1999

“Controlled deposition of individual single-walled carbon nanotubes on chemically functionalized templates”, J. Liu, M. J. Casavant, M. Cox, D. A. Walters, P. Boul, W. Lu, A. J. Rimberg, K. A. Smith, D. T. Colbert and R. E. Smalley, Chemical Physics Letters, 303, 125-129 (1999).